Microchip Technology APTGX400A120D3G 파워 모듈 PM-IGBT-TFS-D3

Technology: Si

Configuration: Half Bridge

Mounting Style: Screw Mount

Pd - Power Dissipation: 1.293 kW

Gate-Emitter Leakage Current: 200 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.8 V

Continuous Collector Current at 25 C: 535 A