Microchip Technology LND01K1-G MOSFETs 측면 N형 MOSFET 감소 모드

Fall Time: 6.4 ns

Rise Time: 11 ns

Technology: Si

Unit Weight: 15 mg

Channel Mode: Depletion

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 360 mW

Vgs - Gate-Source Voltage: - 12 V, + 600 mV

Typical Turn-On Delay Time: 3.8 ns

Typical Turn-Off Delay Time: 1 ns

Id - Continuous Drain Current: 330 mA

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 25 C

Forward Transconductance - Min: 200 mmho

Rds On - Drain-Source Resistance: 1.4 Ohms

Vds - Drain-Source Breakdown Voltage: 9 V

Vgs th - Gate-Source Threshold Voltage: 3 V