Microchip Technology MQ2N4857UB/TR JFETs JFET

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.8 W

Gate-Source Cutoff Voltage: - 6 V

Maximum Drain Gate Voltage: 40 V

Drain-Source Current at Vgs=0: 100 mA

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

Rds On - Drain-Source Resistance: 40 Ohms

Vgs - Gate-Source Breakdown Voltage: - 40 V

Vds - Drain-Source Breakdown Voltage: 40 V