Microchip Technology MSCSM120AM027D3AG 페이즈 레그 PM-MOSFET-SIC-D3

Fall Time: 51 ns

Rise Time: 96 ns

Technology: SiC

Configuration: Dual

Mounting Style: Screw Mount

Transistor Polarity: N-Channel

Pd - Power Dissipation: 2.97 kW

Vgs - Gate-Source Voltage: - 10 V, + 23 V

Typical Turn-On Delay Time: 74 ns

Typical Turn-Off Delay Time: 150 ns

Id - Continuous Drain Current: 733 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 3.5 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 1.8 V