Microsemi APT25SM120B MOSFET

Vgs(th): 2.5 V

Vgs (Max): +25|-10V

Gate Charge (Qg): 72nC

Power consumption: 175W

Technology System: SiCFET(Silicon Carbide)

Drain to Source voltage: 1200V

Continuous drain current: 25A

Operating temperature range: -55 to 175C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 175mOhm

Drive Voltage (Max Rds On, Min Rds On): 20V