Type: Power MOSFET
Vgs(th): 4 V
Gate Charge (Qg): 275nC
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 600V
Continuous drain current: 25A
Input Capacitance (Ciss): 5160pF
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 250mOhm