Microsemi JANS2N3637 BJTs - 바이폴라 트랜지스터 175V 1A 1W 소형 신호 BJT THT

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 1 W

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 175 V

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

Collector- Emitter Voltage VCEO Max: 175 V

Collector-Emitter Saturation Voltage: 300 mV