Microsemi Jantx2N3868S BJTs - 바이폴라 트랜지스터 60V 3mA 1W 쇼트 리드 파워 BJT THT

Technology: Si

Unit Weight: 4.605 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 1 W

Emitter- Base Voltage VEBO: 4 V

Collector- Base Voltage VCBO: 60 V

Maximum DC Collector Current: 3 mA

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 500 mV