Microsemi Jantx2N5796 BJTs - 바이폴라 트랜지스터 듀얼 소형 신호 BJT

Technology: Si

Configuration: Dual

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 600 mW

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: 600 mA

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 40

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 1.6 V