Nexperia PMCM950ENEZ MOSFET

Vgs(th): 1.5 V

Vgs (Max): 20V

Gate Charge (Qg): 45nC

Power consumption: 780mW|12.5W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 60V

Continuous drain current: 4.8A

Input Capacitance (Ciss): 1160pF

Operating temperature range: -55 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 41mOhm

Drive Voltage (Max Rds On, Min Rds On): 4.5|10V