Nexperia PMN120ENEX MOSFET

Vgs(th): 2.7 V

Vgs (Max): 20V

Gate Charge (Qg): 7.4nC

Power consumption: 1.4|6.25W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 60V

Continuous drain current: 3.1A

Input Capacitance (Ciss): 275pF

Operating temperature range: -55 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 123mOhm

Drive Voltage (Max Rds On, Min Rds On): 4.5|10V