Nexperia PMN70XPEAX MOSFET

Vgs(th): 1.25 V

Vgs (Max): 12V

Gate Charge (Qg): 7.8nC

Power consumption: 500mW|6.25W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 20V

Continuous drain current: 3.2A

Input Capacitance (Ciss): 602pF

Operating temperature range: -55 to 150C

Field-effect transistor type: P-CH

Drain to Source on-state resistance: 85mOhm

Drive Voltage (Max Rds On, Min Rds On): 2.5|4.5V

Datasheet