Nexperia PSMN1R9-40PLQ MOSFET

Vgs(th): 2.1 V

Vgs (Max): 20V

Gate Charge (Qg): 120nC

Power consumption: 349W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 40V

Continuous drain current: 150A

Input Capacitance (Ciss): 13200pF

Operating temperature range: -55 to 175C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 1.7mOhm

Drive Voltage (Max Rds On, Min Rds On): 4.5|10V