Nexperia PZTA92,115 BJTs - 바이폴라 트랜지스터 PNP 고전압 트랜지스터

Width: 3.7 mm

Height: 1.7 mm

Length: 6.7 mm

Technology: Si

Unit Weight: 112 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 1.2 W

DC Current Gain hFE Max: 25 at 1 mA, 10 V

Gain Bandwidth Product fT: 50 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 300 V

Maximum DC Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 25 at 1 mA, 10 V, 40 at 10 mA, 10 V, 25 at 30 mA, 10 V

Collector- Emitter Voltage VCEO Max: 300 V

Collector-Emitter Saturation Voltage: 500 mV