NXP PHU97NQ03LT,127 MOSFET

Vgs(th): 2.15 V

Vgs (Max): 20V

Gate Charge (Qg): 11.7nC

Power consumption: 107W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 25V

Continuous drain current: 75A

Input Capacitance (Ciss): 1570pF

Operating temperature range: -55 to 175C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 6.6mOhm

Drive Voltage (Max Rds On, Min Rds On): 4.5|10V