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인증된 전문가에게 직접 연결
인증된 전문가에게 직접 연결
Type: Power MOSFET
Vgs(th): 1 V
Vgs (Max): 8V
Gate Charge (Qg): 0.89nC
Power consumption: 560mW
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 30V
Continuous drain current: 830mA
Input Capacitance (Ciss): 43pF
Operating temperature range: -55 to 150C
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 480mOhm
Drive Voltage (Max Rds On, Min Rds On): 1.8|4.5V
