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인증된 전문가에게 직접 연결
인증된 전문가에게 직접 연결
Type: Power MOSFET
Vgs(th): 0.7V
Vgs (Max): 8V
Gate Charge (Qg): 10.6nC
Power consumption: 1.75W
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 20V
Continuous drain current: 6.3A
Input Capacitance (Ciss): 740pF
Operating temperature range: -55 to 150C
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 28mOhm
Drive Voltage (Max Rds On, Min Rds On): 1.8|4.5V
