NXP PMN23UN,135 Power MOSFET

Type: Power MOSFET

Vgs(th): 0.7V

Vgs (Max): 8V

Gate Charge (Qg): 10.6nC

Power consumption: 1.75W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 20V

Continuous drain current: 6.3A

Input Capacitance (Ciss): 740pF

Operating temperature range: -55 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 28mOhm

Drive Voltage (Max Rds On, Min Rds On): 1.8|4.5V