onsemi 12A02CH-TL-E BJTs - 바이폴라 트랜지스터 BIP PNP 1A 12V

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 700 mW

DC Current Gain hFE Max: 700

Gain Bandwidth Product fT: 450 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 15 V

Continuous Collector Current: - 1 A

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 150 C

Collector- Emitter Voltage VCEO Max: 12 V

Collector-Emitter Saturation Voltage: 120 mV