onsemi 2N4919G BJTs - 바이폴라 트랜지스터 3A 60V 30W PNP

Width: 2.66 mm

Height: 11.04 mm

Length: 7.74 mm

Technology: Si

Unit Weight: 2 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 30 W

Gain Bandwidth Product fT: 3 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: 3 A

Maximum DC Collector Current: 3 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 40

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 600 mV