onsemi 2N7002ET1G MOSFET 소형 신호 NFET SOT23 60V 310mA 2.5옴

Width: 1.3 mm

Height: 0.94 mm

Length: 2.9 mm

Fall Time: 3.6 ns

Rise Time: 1.2 ns

Technology: Si

Unit Weight: 8 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 810 pC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 420 mW

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 1.7 ns

Typical Turn-Off Delay Time: 4.8 ns

Id - Continuous Drain Current: 310 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 530 mS

Rds On - Drain-Source Resistance: 2.5 Ohms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 1 V