onsemi 2SC3649T-TD-E BJTs - 바이폴라 트랜지스터 BIP NPN 1.5A 160V

Technology: Si

Unit Weight: 130.500 mg

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 500 mW

Gain Bandwidth Product fT: 120 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 180 V

Continuous Collector Current: - 1.5 A, 1.5 A

Maximum DC Collector Current: 1.5 A

Maximum Operating Temperature: + 150 C

Collector- Emitter Voltage VCEO Max: 160 V

Collector-Emitter Saturation Voltage: 130 mV