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인증된 전문가에게 직접 연결
인증된 전문가에게 직접 연결
Technology: Si
Unit Weight: 281 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 1 W
DC Current Gain hFE Max: 400
Gain Bandwidth Product fT: 120 MHz
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 180 V
Continuous Collector Current: 1.5 A
Maximum DC Collector Current: 1.5 A
Maximum Operating Temperature: + 150 C
Collector- Emitter Voltage VCEO Max: 160 V
Collector-Emitter Saturation Voltage: 130 mV
