onsemi 2SC6095-TD-E BJTs - 바이폴라 트랜지스터 BIP NPN 2.5A 80V

Technology: Si

Unit Weight: 51.550 mg

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 3.5 W

DC Current Gain hFE Max: 600

Gain Bandwidth Product fT: 350 MHz

Emitter- Base Voltage VEBO: 6.5 V

Collector- Base Voltage VCBO: 120 V

Continuous Collector Current: 2.5 A

Maximum DC Collector Current: 2.5 A

Maximum Operating Temperature: + 150 C

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 100 mV