onsemi 2SD1048-7-TB-E BJTs - 바이폴라 트랜지스터 BIP NPN 0.7A 15V

Technology: Si

Unit Weight: 11.650 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 200 mW

DC Current Gain hFE Max: 900

Gain Bandwidth Product fT: 250 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 20 V

Continuous Collector Current: 700 mA

Maximum DC Collector Current: 700 mA

Maximum Operating Temperature: + 125 C

DC Collector/Base Gain hfe Min: 200

Collector- Emitter Voltage VCEO Max: 15 V

Collector-Emitter Saturation Voltage: 30 mV