onsemi MJD340T4GN BJTs - 바이폴라 트랜지스터 고전압 NPN 바이폴라 파워 트랜지스터

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 15 W

Emitter- Base Voltage VEBO: 3 V

Collector- Base Voltage VCBO: 300 V

Continuous Collector Current: 500 mA

Maximum DC Collector Current: 750 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

Collector- Emitter Voltage VCEO Max: 300 V

Collector-Emitter Saturation Voltage: 1 V