onsemi NCD5700DR2G IGBT, MOSFET 게이트 드라이버 고전류 IGBT 게이트 DR

Features: DESAT Protection, Tight UVLO Thresholds

Shutdown: Shutdown

Fall Time: 19 ns

Rise Time: 18 ns

Technology: Si

Configuration: Inverting, Non-Inverting

Mounting Style: SMD/SMT

Output Current: 7.8 A

Output Voltage: 800 mV, 14.1 V

Number of Drivers: 1 Driver

Number of Outputs: 1 Output

Supply Voltage - Max: 5 V

Supply Voltage - Min: 0 V

Pd - Power Dissipation: 900 mW

Operating Supply Current: 900 uA

Maximum Turn-On Delay Time: 56 ns

Maximum Turn-Off Delay Time: 63 ns

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 40 C