onsemi NSS1C201LT1G BJTs - 바이폴라 트랜지스터 NPN 100V LOW V-SAT SOT23

Width: 1.3 mm

Height: 0.94 mm

Length: 2.9 mm

Technology: Si

Unit Weight: 8 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 710 mW

DC Current Gain hFE Max: 360

Gain Bandwidth Product fT: 110 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 140 V

Continuous Collector Current: 2 A

Maximum DC Collector Current: 2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 40

Collector- Emitter Voltage VCEO Max: 100 V

Collector-Emitter Saturation Voltage: 150 mV