onsemi NSVMMBT5401M3T5G BJTs - 바이폴라 트랜지스터 150 V, 60 mA

Technology: Si

Unit Weight: 1.275 mg

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 130 mW

Gain Bandwidth Product fT: 180 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 160 V

Continuous Collector Current: - 50 mA

Maximum DC Collector Current: 60 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 20

Collector- Emitter Voltage VCEO Max: 150 V

Collector-Emitter Saturation Voltage: 150 mV