onsemi NTD5802NT4G 파워 MOSFET 101A, 40V, 4.2mOhms N-채널

Width: 6.22 mm

Height: 2.38 mm

Length: 6.73 mm

Fall Time: 8.5 ns

Rise Time: 52 ns

Technology: Si

Unit Weight: 330 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 75 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 93.75 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 14 ns

Typical Turn-Off Delay Time: 39 ns

Id - Continuous Drain Current: 101 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 16.8 S

Rds On - Drain-Source Resistance: 4.4 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 1.5 V