onsemi NVBG020N090SC1 SiC MOSFETS 20MOHM 900V

Fall Time: 13 ns

Rise Time: 52 ns

Technology: SiC

Unit Weight: 4.675 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Qg - Gate Charge: 200 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 477 W

Vgs - Gate-Source Voltage: - 8 V, + 22 V

Typical Turn-On Delay Time: 39 ns

Typical Turn-Off Delay Time: 58 ns

Id - Continuous Drain Current: 112 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 49 S

Rds On - Drain-Source Resistance: 28 mOhms

Vds - Drain-Source Breakdown Voltage: 900 V

Vgs th - Gate-Source Threshold Voltage: 4.3 V