onsemi NVD2955T4G 파워 MOSFET

Type: Power MOSFET

Vgs(th): 4 V

Vgs (Max): 20V

Gate Charge (Qg): 30nC

Power consumption: 55W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 60V

Continuous drain current: 12A

Input Capacitance (Ciss): 750pF

Operating temperature range: -55 to 175C

Field-effect transistor type: P-CH

Drain to Source on-state resistance: 180mOhm

Drive Voltage (Max Rds On, Min Rds On): 10V