onsemi SPZT651T1G BJTs - 바이폴라 트랜지스터 SS 60V XSTR NPN SPL

Technology: Si

Unit Weight: 110 mg

REACH - SVHC: Details

Configuration: Single

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 800 mW

Gain Bandwidth Product fT: 75 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 80 V

Maximum DC Collector Current: 2 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 75 at 50 mA, 2 VDC

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 500 mV