PANJIT PJMD990N65EC_L2_00001 MOSFETs 22V, ESD 보호, SOT-23, UNI

Technology: Si

Unit Weight: 297 mg

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Qg - Gate Charge: 9.7 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 47.5 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Id - Continuous Drain Current: 4.7 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 990 Ohms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 4 V