PANJIT PJS6401_S1_00001 MOSFETs 30V P-채널 향상형 MOSFET

Technology: Si

Unit Weight: 14.194 mg

Qg - Gate Charge: 15.5 nC

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Id - Continuous Drain Current: 4.6 A

Rds On - Drain-Source Resistance: 71 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1.3 V