PANJIT PSMN015N10NS2_R2_00201 MOSFETs 100V 1.5mohms ESS BBU LEV 애플리케이션용 TOLL

Technology: Si

Unit Weight: 1 g

Configuration: Single

Qg - Gate Charge: 128 nC

Transistor Polarity: N-Channel

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Id - Continuous Drain Current: 395 A

Rds On - Drain-Source Resistance: 1.5 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 3.8 V