빠른 지원
인증된 전문가에게 직접 연결
인증된 전문가에게 직접 연결
Technology: GaN-on-SiC
Moisture Sensitive: Yes
Transistor Polarity: N-Channel
Pd - Power Dissipation: 144 W
Vgs - Gate-Source Voltage: - 7 V, + 2 V
Id - Continuous Drain Current: 12 A
Vds - Drain-Source Breakdown Voltage: 28 V
Vgs th - Gate-Source Threshold Voltage: - 2.9 V