Renesas Electronics NP50P04SLG-E1-AY MOSFETs 파워 TRS2

Width: 6.1 mm

Height: 2.3 mm

Length: 6.5 mm

Fall Time: 150 ns

Rise Time: 15 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 100 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 84 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 11 ns

Typical Turn-Off Delay Time: 250 ns

Id - Continuous Drain Current: 50 A

Maximum Operating Temperature: + 150 C

Forward Transconductance - Min: 12 S

Rds On - Drain-Source Resistance: 9.6 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V