ROHM Semiconductor BSM080D12P2C008 하프 브리지 하프 브리지 모듈 SiC DMOS & SBD 1200V

Fall Time: 40 ns

Rise Time: 30 ns

Technology: SiC

Configuration: Half Bridge

Mounting Style: Screw Mount

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Vr - Reverse Voltage: 1.2 kV

Pd - Power Dissipation: 600 W

Vgs - Gate-Source Voltage: - 6 V, + 22 V

Typical Turn-On Delay Time: 20 ns

Typical Turn-Off Delay Time: 80 ns

Id - Continuous Drain Current: 80 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 1.6 V