ROHM Semiconductor BSM180D12P3C007 SiC 파워 모듈 하프 브리지 모듈 SiC UMOSFET & SBD

Width: 45.6 mm

Height: 21.1 mm

Length: 122 mm

Fall Time: 50 ns

Rise Time: 70 ns

Technology: SiC

Unit Weight: 302.171 g

Configuration: Dual

Mounting Style: Screw Mount

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Vr - Reverse Voltage: 1.2 kV

Pd - Power Dissipation: 880 W

Vgs - Gate-Source Voltage: - 4 V, + 22 V

Typical Turn-On Delay Time: 50 ns

Typical Turn-Off Delay Time: 165 ns

Id - Continuous Drain Current: 180 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 2.7 V