ROHM Semiconductor EMZ8T2R BJTs - 바이폴라 트랜지스터 듀얼 PNP/NPN

Width: 1.2 mm

Height: 0.5 mm

Length: 1.6 mm

Technology: Si

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: NPN, PNP

Pd - Power Dissipation: 150 mW

DC Current Gain hFE Max: 560 at 1 mA, 6 V

Gain Bandwidth Product fT: 180 MHz, 260 MHz

Emitter- Base Voltage VEBO: 6 V, 7 V

Collector- Base Voltage VCBO: 15 V, 60 V

Continuous Collector Current: 150 mA, - 500 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 120 at 1 mA, 6 V

Collector- Emitter Voltage VCEO Max: 12 V, 50 V

Collector-Emitter Saturation Voltage: 250 mV, 400 mV