ROHM Semiconductor QH8MA4TCR MOSFETs 제너 다이오드, 100mW, 2핀

Fall Time: 7 ns, 22 ns

Rise Time: 19 ns, 16 ns

Technology: Si

Unit Weight: 10 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel, 1 P-Channel

Qg - Gate Charge: 15.5 nC, 19.6 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel, P-Channel

Pd - Power Dissipation: 2.6 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 8 ns, 10 ns

Typical Turn-Off Delay Time: 33 ns, 55 ns

Id - Continuous Drain Current: 9 A, 8 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 4.4 S, 5.5 S

Rds On - Drain-Source Resistance: 16 mOhms, 28.6 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V