ROHM Semiconductor QS8J12TCR MOSFETs 1.5V 드라이브 Pch+Pch MOSFET 12V 4.5A

Fall Time: 150 ns

Rise Time: 60 ns

Technology: Si

Unit Weight: 10 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 P-Channel

Qg - Gate Charge: 40 nC

Number of Channels: 2 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 1.5 W

Vgs - Gate-Source Voltage: - 8 V, 0 V

Typical Turn-On Delay Time: 16 ns

Typical Turn-Off Delay Time: 400 ns

Id - Continuous Drain Current: 4.5 A

Maximum Operating Temperature: + 150 C

Forward Transconductance - Min: 5.5 S

Rds On - Drain-Source Resistance: 29 mOhms

Vds - Drain-Source Breakdown Voltage: 12 V

Vgs th - Gate-Source Threshold Voltage: 1 V