빠른 지원
인증된 전문가에게 직접 연결
인증된 전문가에게 직접 연결
Fall Time: 35 ns
Rise Time: 40 ns
Technology: Si
Unit Weight: 2 g
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Single
Mounting Style: Through Hole
Transistor Type: 1 N-Channel
Qg - Gate Charge: 32 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 53 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 25 ns
Typical Turn-Off Delay Time: 90 ns
Id - Continuous Drain Current: 11 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 3.0 S
Rds On - Drain-Source Resistance: 340 mOhms
Vds - Drain-Source Breakdown Voltage: 600 V
Vgs th - Gate-Source Threshold Voltage: 4 V
