ROHM Semiconductor RV2C014BCT2CL 소형 신호 MOSFET P-채널 -20V Vdss -/+1.4A Id RASMID

Fall Time: 3.1 ns

Rise Time: 12 ns

Technology: Si

Unit Weight: 25.865 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 600 mW

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 3.1 ns

Typical Turn-Off Delay Time: 23 ns

Id - Continuous Drain Current: 1.4 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 0.3 S

Rds On - Drain-Source Resistance: 300 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 1 V