ROHM Semiconductor RW1E015RPT2R 파워 MOSFET 4V 드라이브 P채널 MOSFET 드라이브 P채널

Width: 1.4 mm

Height: 0.65 mm

Length: 1.7 mm

Fall Time: 13 ns

Rise Time: 8 ns

Technology: Si

Unit Weight: 3 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 3.2 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 700 mW

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 12 ns

Typical Turn-Off Delay Time: 40 ns

Id - Continuous Drain Current: 1.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 1.2 S

Rds On - Drain-Source Resistance: 160 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V