ROHM Semiconductor RXT2907AT100 BJTs - 바이폴라 트랜지스터 탄약 팩 - 트랜지스터 NPN MPT3

Technology: Si

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 500 mW

DC Current Gain hFE Max: 300

Gain Bandwidth Product fT: 200 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: - 600 mA

Maximum DC Collector Current: 600 mA

Maximum Operating Temperature: + 150 C

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 1.6 V