ROHM Semiconductor SCT2280KEHRC11 MOSFET의 1200V, 14A, THD, 실리콘 카바이드(SiC) MOSFET

Fall Time: 29 ns

Rise Time: 19 ns

Technology: SiC

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 36 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 108 W

Vgs - Gate-Source Voltage: - 6 V, + 22 V

Typical Turn-On Delay Time: 19 ns

Typical Turn-Off Delay Time: 47 ns

Id - Continuous Drain Current: 14 A

Maximum Operating Temperature: + 175 C

Forward Transconductance - Min: 1.4 S

Rds On - Drain-Source Resistance: 364 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 4 V