ROHM Semiconductor SCT4013DRC15 MOSFET의 TO247 750V 105A N-CH SIC

Fall Time: 17 ns

Rise Time: 32 ns

Technology: SiC

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 170 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 312 W

Vgs - Gate-Source Voltage: - 4 V, + 21 V

Typical Turn-On Delay Time: 17 ns

Typical Turn-Off Delay Time: 82 ns

Id - Continuous Drain Current: 105 A

Maximum Operating Temperature: + 175 C

Forward Transconductance - Min: 32 S

Rds On - Drain-Source Resistance: 16.9 mOhms

Vds - Drain-Source Breakdown Voltage: 750 V

Vgs th - Gate-Source Threshold Voltage: 4.8 V