ROHM Semiconductor SH8M4TB1 MOSFET

FET Feature: Logic Level Gate

Mounting Type: Surface Mount

Power-Maximum: 2W

Operating temperature: 150C

Drain to Source voltage: 30V

Continuous drain current: 9A/7A

Current - Drain (Id) (25°C): 9|7A

Field-effect transistor type: N and P-Channel

Gate Charge - (when applying Vgs): 15nC@5V

On Voltage - (Vgs when Id is applied): 2.5V@1mA

On Resistance - (Rds when Id,Vgs is applied): 18mOhm@9A|10V

Input Capacitance - (Ciss when Vds is applied): 1190pF@10V