ROHM Semiconductor SST6427T116 BJTs - 바이폴라 트랜지스터 표면 NPN

Technology: Si

Unit Weight: 8 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

DC Current Gain hFE Max: 10000 at 10 mA, 5 V

Emitter- Base Voltage VEBO: 12 V

Collector- Base Voltage VCBO: 40 V

Collector- Emitter Voltage VCEO Max: 40 V